Unusual resonance property of graphene/h-BN stacked mechanical resonators

Abstract We fabricate the graphene/h-BN stacked mechanical resonator and investigate gate voltage dependence of resonance property resonator. The mode splitting on is found at a specific region, where frequency difference two peaks corresponding to modes showed square dependence. This implies that observed electrostatic attraction graphene layer influences interlayer interaction h-BN. energy transfer between states was also observed.